| PART |
Description |
Maker |
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STP80N06-1 STP80N06-10 4888 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
Motorola, Inc.
|
| NTE2905 |
P?Ch, Enhancement Mode High Speed Switch
|
NTE Electronics
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| NTE2376 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2924 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2922 |
MOSFET N-Ch Enhancement Mode High Speed Switch
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| IXTU01N100 IXTY01N100 |
High Voltage MOSFET N-Channel, Enhancement Mode
|
IXYS Corporation
|
| NTE2397 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
